Design for Manufacturability and Statistical Design: A - download pdf or read online

By Michael Orshansky

ISBN-10: 0387309284

ISBN-13: 9780387309286

ISBN-10: 0387690115

ISBN-13: 9780387690117

Design for Manufacturability and Statistical layout: A confident Approach presents a radical remedy of the factors of variability, tools for statistical facts characterization, and methods for modeling, research, and optimization of built-in circuits to enhance yield. the target of the positive strategy constructed during this publication is to formulate a constant set of tools and rules beneficial for rigorous statistical layout and layout for manufacturability from equipment physics to large-scale circuit optimization. The segments of the publication are dedicated, respectively, to

  • understanding the explanations of variability;
  • design of attempt constructions for variability characterization;
  • statistically rigorous information analysis;
  • techniques of layout for manufacturability in lithography and in chemical mechanical polishing;
  • statistical simulation, research, and optimization suggestions for making improvements to parametric yield.

Design for Manufacturability and Statistical layout: A confident Approach provides an outline of the tools that have to be mastered for cutting-edge layout for manufacturability and statistical layout methodologies. it truly is a major reference for practitioners and scholars within the box of computer-aided layout of built-in circuits.

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Extra resources for Design for Manufacturability and Statistical Design: A Constructive Approach

Example text

A more detailed analysis of the impact of RDF on SRAM is presented later in the book. 17 shows the projected magnitudes of 3σVth together with the nominal saturated threshold voltage for several values of Lgate . The numbers are based on the projections contained in the ITRS update of 2006, and are premised on the transition from the conventional bulk device to ultra thin-body fully depleted device at the 32nm technology node. This is the reason for the non-monotonic trends in Vth and 3σVth observed in the figure.

The variation of Vth is, in fact, due to several distinct physical causes, including the short-channel effect, Vth dependence on the thickness of the silicon channel (fin), and the uncertainty due to random dopant fluctuations [36]. 8 PHYSICAL VARIATIONS DUE TO AGING AND WEAROUT 39 fin), forming the conducting channel on both sides of the fin. The threshold voltage of the FinFET strongly depends on the thickness of the silicon fin. The most severe variability issue in such devices is likely to be the channel thickness control.

NBTI is due to the creation of interface traps and the positive trapped charge. The NBTI stress occurs when the p-FET is on with gate voltage Vg = 0 and Vd = Vs = Vdd . g. 10 years) the p-FET threshold voltage can change by as much as 42%. Empirical observations show, however, that when the stress is removed, the NBTI can be reversed to some extent, even if not entirely. Since in a real circuit environment transistors typically are not stressed continuously, the true NBTI lifetime can be much longer.

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Design for Manufacturability and Statistical Design: A Constructive Approach by Michael Orshansky

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Categories: Industrial Engineering